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dc.contributor.authorLo, An-Yaen_US
dc.contributor.authorLiu, Shang-Binen_US
dc.contributor.authorKuo, Cheng-Tzuen_US
dc.date.accessioned2014-12-08T15:48:23Z-
dc.date.available2014-12-08T15:48:23Z-
dc.date.issued2010-09-01en_US
dc.identifier.issn1931-7573en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11671-010-9648-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/32233-
dc.description.abstractTo improve the understanding on CNT growth modes, the various processes, including thermal CVD, MP-CVD and ECR-CVD, have been used to deposit CNTs on nanoporous SBA-15 and Si wafer substrates with C(2)H(2) and H(2) as reaction gases. The experiments to vary process parameter of Delta T, defined as the vector quantities of temperature at catalyst top minus it at catalyst bottom, were carried out to demonstrate its effect on the CNT growth mode. The TEM and TGA analyses were used to characterize their growth modes and carbon yields of the processes. The results show that Delta T can be used to monitor the temperature gradient direction across the catalyst nanoparticle during the growth stage of CNTs. The results also indicate that the tip-growth CNTs, base-growth CNTs and onion-like carbon are generally fabricated under conditions of Delta T > 0, < 0 and similar to 0, respectively. Our proposed growth mechanisms can be successfully adopted to explain why the base- and tip-growth CNTs are common in thermal CVD and plasma-enhanced CVD processes, respectively. Furthermore, our experiments have also successfully demonstrated the possibility to vary Delta T to obtain the desired growth mode of CNTs by thermal or plasma-enhanced CVD systems for different applications.en_US
dc.language.isoen_USen_US
dc.subjectCNTsen_US
dc.subjectGrowth mechanismen_US
dc.subjectBase-growthen_US
dc.subjectTip-growthen_US
dc.subjectCVDen_US
dc.titleEffect of Temperature Gradient Direction in the Catalyst Nanoparticle on CNTs Growth Modeen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11671-010-9648-4en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume5en_US
dc.citation.issue9en_US
dc.citation.spage1393en_US
dc.citation.epage1402en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000280846000004-
dc.citation.woscount4-
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