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dc.contributor.authorBogle, Kashinath A.en_US
dc.contributor.authorAnbusathaiah, Varatharajanen_US
dc.contributor.authorArredondo, Miryamen_US
dc.contributor.authorLin, Jiunn-Yuanen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorO'Neill, Christopheren_US
dc.contributor.authorGregg, John M.en_US
dc.contributor.authorCastell, Martin R.en_US
dc.contributor.authorNagarajan, Valanooren_US
dc.date.accessioned2014-12-08T15:48:23Z-
dc.date.available2014-12-08T15:48:23Z-
dc.date.issued2010-09-01en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nn1010123en_US
dc.identifier.urihttp://hdl.handle.net/11536/32237-
dc.description.abstractPerovskite phase instability of BiMnO(3) has been exploited to synthesize epitaxial metal oxide magnetic nanocrystals. Thin film processing conditions are tuned to promote the breakdown of the perovskite precursor into Bi(2)O(3) matrix and magnetic manganese oxide islands. Subsequent cooling in vacuum ensures complete volatization of the Bi(2)O(3), thus leaving behind an array of self-assembled magnetic Mn(3)O(4) nanostructures. Both shape and size can be systematically controlled by the ambient oxygen environments and deposition time. As such, this approach can be extended to any other Bi-based complex ternary oxide system as it primarily hinges on the breakdown of parent Bi-based precursor and subsequent Bi(2)O(3) volatization.en_US
dc.language.isoen_USen_US
dc.subjectepitaxial nanocrystalsen_US
dc.subjectpulse laser depositionen_US
dc.subjectmetal oxideen_US
dc.subjectphase separationen_US
dc.subjectvolatizationen_US
dc.titleSynthesis of Epitaxial Metal Oxide Nanocrystals via a Phase Separation Approachen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nn1010123en_US
dc.identifier.journalACS NANOen_US
dc.citation.volume4en_US
dc.citation.issue9en_US
dc.citation.spage5139en_US
dc.citation.epage5146en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000282121000024-
dc.citation.woscount13-
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