完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCHEN, CFen_US
dc.contributor.authorHONG, TMen_US
dc.date.accessioned2014-12-08T15:04:43Z-
dc.date.available2014-12-08T15:04:43Z-
dc.date.issued1992-11-23en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://hdl.handle.net/11536/3226-
dc.description.abstractWe utilized carbon dioxide to replace hydrogen in CO2-(CH4, C2H2, C3H8) gas mixtures and studied the effect on diamond growth of adding a small amount of hydrogen to the system. The deposits were analyzed by scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. Our results showed that diamond film with high growth rate and good crystallinity could be obtained in these systems without supplying additional hydrogen gas. When the amount of hydrogen was increased, all the deposited film in the systems gradually displayed poorer morphology and crystallinity. This indicates that graphitic or amorphous carbon components in the diamond film increased with the addition of hydrogen, with a resulting negative effect on the quality of the diamond film. The influence of hydrogen on diamond growth is also investigated in this study by comparing growth rates and C:H:O ratios among various CO2-(CH4, C2H2, C3H8) systems.en_US
dc.language.isoen_USen_US
dc.titleTHE ROLE OF HYDROGEN IN DIAMOND SYNTHESIS FROM CARBON-DIOXIDE HYDROCARBON GASES BY MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITIONen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalSURFACE & COATINGS TECHNOLOGYen_US
dc.citation.volume55en_US
dc.citation.issue1-3en_US
dc.citation.spage368en_US
dc.citation.epage373en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:A1992KA63900004-
顯示於類別:會議論文