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dc.contributor.authorHsu, Li-Hanen_US
dc.contributor.authorWu, Wei-Chengen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorZirath, Herberten_US
dc.contributor.authorHu, Yin-Chuen_US
dc.contributor.authorWang, Chin-Teen_US
dc.contributor.authorWu, Yun-Chien_US
dc.contributor.authorTsai, Szu-Pingen_US
dc.date.accessioned2014-12-08T15:48:37Z-
dc.date.available2014-12-08T15:48:37Z-
dc.date.issued2010-08-01en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMTT.2010.2052960en_US
dc.identifier.urihttp://hdl.handle.net/11536/32332-
dc.description.abstractThis study demonstrates a flip-chip interconnect with epoxy-based underfill (epsilon(r) = 3.5 and tan delta = 0.02 at 10 MHz) for packaging applications up to V-band frequencies. To achieve the best interconnect performance, both the matching designs on GaAs chip and Al(2)O(3) substrate were adopted with the underfill effects taken into consideration. The optimized flip-chip interconnect showed excellent performance from dc to 67 GHz with return loss below -20 dB and insertion loss less than 0.6 dB. Furthermore, the dielectric loss induced by the underfill was extracted from measurement and compared with the simulation results. The reliability tests including 85 degrees C/85 % relative humidity test, thermal cycling test, and shear force test were performed. For the first time, the S-parameters measurement was performed to check the flip-chip reliability, and no performance decay was observed after 1000 thermal cycles. Moreover, the mechanical strength was improved about 12 times after the underfill was applied. The results show that the proposed flip-chip architecture has excellent reliability and can be applied for commercial applications.en_US
dc.language.isoen_USen_US
dc.subjectDesignen_US
dc.subjectepoxy resinen_US
dc.subjectflip-chipen_US
dc.subjectinterconnecten_US
dc.subjectmillimeter wave (MMW)en_US
dc.subjectpackagingen_US
dc.subjectreliabilityen_US
dc.subjectunderfillen_US
dc.subjectV-banden_US
dc.titleDesign of Flip-Chip Interconnect Using Epoxy-Based Underfill Up to V-Band Frequencies With Excellent Reliabilityen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TMTT.2010.2052960en_US
dc.identifier.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUESen_US
dc.citation.volume58en_US
dc.citation.issue8en_US
dc.citation.spage2244en_US
dc.citation.epage2250en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000283057400019-
dc.citation.woscount2-
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