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dc.contributor.authorTiwari, Rajanish N.en_US
dc.contributor.authorChen, Wei-Chunen_US
dc.contributor.authorTiwari, Jitendra N.en_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2014-12-08T15:48:38Z-
dc.date.available2014-12-08T15:48:38Z-
dc.date.issued2010-08-01en_US
dc.identifier.issn0021-8898en_US
dc.identifier.urihttp://dx.doi.org/10.1107/S0021889810018340en_US
dc.identifier.urihttp://hdl.handle.net/11536/32355-
dc.description.abstractThin diamond microplates have been grown on dome-like/hemispherical carbon particles on titanium carbide by a microwave plasma chemical vapour deposition (MPCVD) method using a gas mixture of methane and hydrogen. The diamond microplates have a thickness of about 200 nm. A thin (300 nm) film of titanium carbide was formed during carburization of sputtered titanium on an Si(100) substrate in MPCVD. The hemispherical carbon particles were covered with diamond microplates. The diamond microplates are isolated electron-emitting spherules and exhibit a low threshold (50 V mu m (1)) and high current density (0.92 mA cm(-2)) in their field emission properties. A possible mechanism for the formation of the diamond microplates and hemispherical carbon particles is presented.en_US
dc.language.isoen_USen_US
dc.titleDiamond plates on dome-like particles: preparation, characterization and field emission propertiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1107/S0021889810018340en_US
dc.identifier.journalJOURNAL OF APPLIED CRYSTALLOGRAPHYen_US
dc.citation.volume43en_US
dc.citation.issueen_US
dc.citation.spage883en_US
dc.citation.epage889en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000279429500028-
dc.citation.woscount1-
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