標題: Experimental electronic structure of Be2C
作者: Tzeng, CT
Tsuei, KD
Lo, WS
光電工程研究所
Institute of EO Enginerring
公開日期: 15-九月-1998
摘要: The insulating Be2C thin films have been successfully prepared on a Be surface. A low-energy electron diffraction pattern shows that the films have (100) orientation along the surface normal. We have used angle-resolved photoemission to map out the occupied bulk band dispersion along the T-X direction. The band-gap edges at the X point are 6.7 and 11.5 eV below the valence-band maximum, which is located at the Gamma point. These values are in good agreement with theoretical calculations. The unoccupied bulk electronic structure is measured using C Is near-edge x-ray-absorption spectroscopy. The spectrum is similar in shape to the energy-loss spectrum and the calculated p-partial density of states, while the peak positions are different.
URI: http://dx.doi.org/10.1103/PhysRevB.58.6837
http://hdl.handle.net/11536/32391
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.58.6837
期刊: PHYSICAL REVIEW B
Volume: 58
Issue: 11
起始頁: 6837
結束頁: 6843
顯示於類別:期刊論文


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