標題: | Experimental electronic structure of Be2C |
作者: | Tzeng, CT Tsuei, KD Lo, WS 光電工程研究所 Institute of EO Enginerring |
公開日期: | 15-九月-1998 |
摘要: | The insulating Be2C thin films have been successfully prepared on a Be surface. A low-energy electron diffraction pattern shows that the films have (100) orientation along the surface normal. We have used angle-resolved photoemission to map out the occupied bulk band dispersion along the T-X direction. The band-gap edges at the X point are 6.7 and 11.5 eV below the valence-band maximum, which is located at the Gamma point. These values are in good agreement with theoretical calculations. The unoccupied bulk electronic structure is measured using C Is near-edge x-ray-absorption spectroscopy. The spectrum is similar in shape to the energy-loss spectrum and the calculated p-partial density of states, while the peak positions are different. |
URI: | http://dx.doi.org/10.1103/PhysRevB.58.6837 http://hdl.handle.net/11536/32391 |
ISSN: | 1098-0121 |
DOI: | 10.1103/PhysRevB.58.6837 |
期刊: | PHYSICAL REVIEW B |
Volume: | 58 |
Issue: | 11 |
起始頁: | 6837 |
結束頁: | 6843 |
顯示於類別: | 期刊論文 |