完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, DRen_US
dc.contributor.authorLuo, JSen_US
dc.contributor.authorLin, WTen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorShih, PSen_US
dc.date.accessioned2014-12-08T15:48:43Z-
dc.date.available2014-12-08T15:48:43Z-
dc.date.issued1998-09-07en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.122161en_US
dc.identifier.urihttp://hdl.handle.net/11536/32392-
dc.description.abstractThe interfacial reactions of Pd/Si0.76Ge0.24 were studied by pulsed KrF laser annealing as a function of energy density and pulse number. At an energy density of 0.1-0.4 J/cm(2), a continuous germanosilicide layer composed of a low-temperature phase, Pd-2(Si1-xGex), and a high-temperature phase, Pd(Si1-xGex), was formed. Incontrast to vacuum annealing, Ge segregation out of the germanosilicide layer and the strain relaxation of the residual Si0.76Ge0.24 film could be effectively suppressed by pulsed KrF laser annealing at 0.1 J/cm(2). Multiple pulse annealing at 0.1 J/cm(2) could further homogenize the Pd concentration of the germanosilicide layer and promote the growth of Pd(Si1-xGex). Concurrently, the smoothness of the germanosilicide layer was substantially improved in comparison with those grown by vacuum annealing at temperatures above 200 degrees C. The studies also revealed that for multiple pulse annealing at 0.1 J/cm(2) with a low repetition rate, 1 Hz, the evolution of phase formation and Pd diffusion could be proceeded by each individual laser pulse. (C) 1998 American Institute of Physics. [S0003-6951(98)04136-9].en_US
dc.language.isoen_USen_US
dc.titleInterfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.122161en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume73en_US
dc.citation.issue10en_US
dc.citation.spage1355en_US
dc.citation.epage1357en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000075786000016-
dc.citation.woscount15-
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