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dc.contributor.authorWu, JPen_US
dc.contributor.authorShih, CUen_US
dc.contributor.authorChu, HSen_US
dc.date.accessioned2014-12-08T15:48:44Z-
dc.date.available2014-12-08T15:48:44Z-
dc.date.issued1998-09-01en_US
dc.identifier.issn0011-2275en_US
dc.identifier.urihttp://hdl.handle.net/11536/32405-
dc.description.abstractThis work presents a thermal analysis on predicting the temperature increase and the voltage response of high-T-c superconducting bolometers. To consider the thermal boundary resistance between film and substrate, an acoustic mismatch model (AMM), a diffusive mismatch model (DMM), and an interfacial layer model (ILM) are employed. The thermal boundary resistance significantly influences the voltage response. Additionally, several common substrates are examined. SrTiO3 (100) or LaAlO3 (100) is a better substrate for high-T-c superconducting bolometers. Furthermore, we demonstrated that there are several factors to affect the voltage response, such as the pulse duration for a constant total incident energy or a fixed highest incident heat flux, the pulse distribution function in time, optical penetration depth, the thermal conductivities of the film and substrate, initial operating temperature, thickness ratio, and the amount of incident heat flux. One interesting finding was that when compared with experimental data, all the theoretical values from the present study as well as the other previously theoretical treatment overestimate the voltage response near the transition temperature. (C) 1998 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectbolometeren_US
dc.subjectthermal boundary resistanceen_US
dc.subjectvoltage responseen_US
dc.titleInfluence of thermal boundary resistance on bolometric response of high-T-c superconducting filmsen_US
dc.typeArticleen_US
dc.identifier.journalCRYOGENICSen_US
dc.citation.volume38en_US
dc.citation.issue9en_US
dc.citation.spage881en_US
dc.citation.epage892en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000076972100004-
dc.citation.woscount2-
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