Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | BAI, SN | en_US |
dc.contributor.author | TSENG, TY | en_US |
dc.date.accessioned | 2014-12-08T15:04:44Z | - |
dc.date.available | 2014-12-08T15:04:44Z | - |
dc.date.issued | 1992-11-01 | en_US |
dc.identifier.issn | 0361-5235 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1007/BF02665886 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/3245 | - |
dc.description.abstract | The ac response of ZnO-based varistors was measured as a function of temperature and applied electric field. Conductivity-frequency measurements indicated that the grain boundaries of the ZnO varistors were amorphous. The device resistance was found to decrease as the temperature/applied field increased. This was attributed to deterioration of the insulating property of the grain boundaries due to generation of conduction carriers in the ZnO grains. As a large amount of these charge carriers passed through the grain boundaries, the ZnO varistors remarkably revealed a non-Debye characteristic that can be modeled by a capacitance to simulate the behavior of the grain boundaries | en_US |
dc.language.iso | en_US | en_US |
dc.subject | ZNO VARISTOR | en_US |
dc.subject | GRAIN BOUNDARY | en_US |
dc.subject | AC RESPONSE | en_US |
dc.title | THE EFFECT OF GRAIN-BOUNDARIES ON THE ELECTRICAL-PROPERTIES OF ZINC OXIDE-BASED VARISTOR | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1007/BF02665886 | en_US |
dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
dc.citation.volume | 21 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 1073 | en_US |
dc.citation.epage | 1079 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1992KA95300009 | - |
dc.citation.woscount | 8 | - |
Appears in Collections: | Articles |