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dc.contributor.authorBAI, SNen_US
dc.contributor.authorTSENG, TYen_US
dc.date.accessioned2014-12-08T15:04:44Z-
dc.date.available2014-12-08T15:04:44Z-
dc.date.issued1992-11-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/BF02665886en_US
dc.identifier.urihttp://hdl.handle.net/11536/3245-
dc.description.abstractThe ac response of ZnO-based varistors was measured as a function of temperature and applied electric field. Conductivity-frequency measurements indicated that the grain boundaries of the ZnO varistors were amorphous. The device resistance was found to decrease as the temperature/applied field increased. This was attributed to deterioration of the insulating property of the grain boundaries due to generation of conduction carriers in the ZnO grains. As a large amount of these charge carriers passed through the grain boundaries, the ZnO varistors remarkably revealed a non-Debye characteristic that can be modeled by a capacitance to simulate the behavior of the grain boundariesen_US
dc.language.isoen_USen_US
dc.subjectZNO VARISTORen_US
dc.subjectGRAIN BOUNDARYen_US
dc.subjectAC RESPONSEen_US
dc.titleTHE EFFECT OF GRAIN-BOUNDARIES ON THE ELECTRICAL-PROPERTIES OF ZINC OXIDE-BASED VARISTORen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/BF02665886en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume21en_US
dc.citation.issue11en_US
dc.citation.spage1073en_US
dc.citation.epage1079en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1992KA95300009-
dc.citation.woscount8-
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