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dc.contributor.authorWu, KHen_US
dc.contributor.authorHsieh, MCen_US
dc.contributor.authorChen, SPen_US
dc.contributor.authorChao, SCen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.contributor.authorTseng, TYen_US
dc.contributor.authorFu, CMen_US
dc.contributor.authorChen, JMen_US
dc.contributor.authorLiu, RGen_US
dc.date.accessioned2014-12-08T15:48:50Z-
dc.date.available2014-12-08T15:48:50Z-
dc.date.issued1998-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/32467-
dc.description.abstractWe describe a novel technique capable of controlling the oxygen content of YBa2Cu3Ox (YBCO) films in a precise and reversible manner. The temperature dependence of resistivity and the distinct two-plateau behavior in critical temperature T-CO versus oxygen content plot of these films are consistent with those observed in the bulk and single crystals of YBCO. The O 1s and Cu 2p absorption spectra of these films were measured by polarization-dependent X-ray absorption spectroscopy (XAS). The intensity variations of the pre-edge peaks as a function of oxygen content are discussed. We also used these films to systematically study the electron-phonon coupling strength and the position of Fermi level by using a femtosecond pump-probe technique. A clear sign-reversal of the transient reflectivity, which was consistently explained by the thermomodulation model, was observed. Both of these optical measurements support the idea that the electronic structure of YBCO cuprates is based on the charge transfer model with hybridization between the Cu and O sites.en_US
dc.language.isoen_USen_US
dc.subjectoxygen-controlled YBCO filmsen_US
dc.subjectX-ray absorption spectroscopyen_US
dc.subjectultrafast relaxation dynamicsen_US
dc.subjectcarrier-phonon couplingen_US
dc.subjectFermi level positionen_US
dc.titlePreparation and electronic properties of YBa2Cu3Ox films with controlled oxygen stoichiometriesen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume37en_US
dc.citation.issue8en_US
dc.citation.spage4346en_US
dc.citation.epage4355en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000076313100024-
dc.citation.woscount24-
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