Title: | Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : H |
Authors: | Chen, YA Wu, YH Tsay, WC Laih, LH Hong, JW Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Issue Date: | 9-Jul-1998 |
Abstract: | To improve the electroluminescence (EL) properties of the nSiC:H-based pin thin film light-emitting diodes (TFLEDs) with the promotion of hole injection efficiency, a thin Mo metal film was used as a buffer layer to prevent reactions between the ITO (indium-tin-oxide) electrode and the p(+)-a-Si:H layer. With the formation of semi-transparent Mo silicide after annealing, a lower EL threshold voltage and a significantly higher brightness for a finished TFLED were achieved. The brightness of the obtained device was 1300cd/m(2) at an injection current density of 600mA/cm(2), and its EL threshold voltage was 14V. |
URI: | http://hdl.handle.net/11536/32507 |
ISSN: | 0013-5194 |
Journal: | ELECTRONICS LETTERS |
Volume: | 34 |
Issue: | 14 |
Begin Page: | 1433 |
End Page: | 1434 |
Appears in Collections: | Articles |
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