Title: | Comparison of N-2 and NH3 plasma passivation effects on polycrystalline silicon thin-film transistors |
Authors: | Lee, YS Lin, HY Lei, TF Huang, TY Chang, TC Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | thin-film transistor;poly-Si TFT;N-2 plasma passivation;NH3 plasma passivation;hot-carrier reliability |
Issue Date: | 1-Jul-1998 |
Abstract: | The passivation effects of pure N-2 plasma on polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been studied and compared with those of NH3 plasma. We found that, similar to the recently-proposed NH3 plasma passivation, N-2 plasma passivation can also effectively improve device parameters such as field effect mobility, threshold voltage subthreshold swing, off current, and on/off current ratio. While the improvement of NH3-passivated devices can be attributed to both hydrogen and nitrogen passivation effects, nitrogen passivation alone is mainly responsible for the improvement of N-2-passivated devices. Zn addition, we round that N-2-passivated devices exhibit much better hot-carrier reliability than NH3-passivated devices. The better hot-carrier reliability of N-2-passivated devices can be explained by the formation of strong Si-N bonds which are difficult to break, while effectively eliminating the weaker N-H bonds, which are inevitable in NH3-passivated devices. The results of a Fourier. transform infrared (FTIR) spectrum analysis performed in this study are consistent with this proposition. |
URI: | http://hdl.handle.net/11536/32526 |
ISSN: | 0021-4922 |
Journal: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 37 |
Issue: | 7 |
Begin Page: | 3900 |
End Page: | 3903 |
Appears in Collections: | Articles |
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