Fabrication and raman analysis of ZnSe quantum dots in glass matrix thin films by pulsed laser evaporation

Abstract

We have successfully fabricated ZnSe-microcrystal-doped silica-glass thin films by pulsed laser evaporation from ZnSe powder embedded in sol-gel glass targets and demonstrated that the spatial cell-elation model call be used to analyze the LO Raman mode of ZnSe semiconductor doped glass thin films. The obtained correlation lengths differ from the real sizes of the particulates observed by scanning electron microscopy which may bz due to the fact that the particulates art polycrystalline, with different orientations separated by grain boundaries, and the correlation length just provides a measure of the separated average grain dimension. The photoluminescence spectrum indicates that the carriers may tunnel through the grain walls in the polycrystalline particulates. Low temperature annealing only causes aggregate of particulates without merging the grain boundaries.