完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, LC | en_US |
dc.contributor.author | Lu, TR | en_US |
dc.contributor.author | Kuo, CT | en_US |
dc.contributor.author | Bhusari, DM | en_US |
dc.contributor.author | Wu, JJ | en_US |
dc.contributor.author | Chen, KH | en_US |
dc.contributor.author | Chen, TM | en_US |
dc.date.accessioned | 2014-12-08T15:48:57Z | - |
dc.date.available | 2014-12-08T15:48:57Z | - |
dc.date.issued | 1998-06-29 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.121662 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32556 | - |
dc.description.abstract | Carbon nitride films have been synthesized by argon ion-beam sputtering from a biomolecular compound target, 8-aza-6-aminopurine (C4N6H4) The compound has a six-membered ring structure similar to that existing in the hypothetical beta-C3N4. Except fur the target material, no other source of nitrogen was used during sputtering deposition. It was found that crystalline carbon nitride with high N/C atomic composition ratios of 0.43-0.56 can be formed even at room temperature. The infrared spectra of the film exhibit two peaks at 1383 and 1643 cm(-1), corresponding to C-N and C=N stretching modes, respectively. No detectable peak at 2200 cm(-1) (C=N stretching mode) is observed. Both x-ray diffraction and transmission electron microscopy show a very strong broad peak at 3.2 Angstrom, comparable to the d spacing of the (110) orientation in the beta-C3N4 structure. However, it is suggested that the film contains a nanocrystalline phase with a crystal structure yet to be determined. (C) 1998 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | The use of a biomolecular target for crystalline carbon nitride film deposition by Ar ion-beam sputtering without any other source of nitrogen | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.121662 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 72 | en_US |
dc.citation.issue | 26 | en_US |
dc.citation.spage | 3449 | en_US |
dc.citation.epage | 3451 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:000075274700018 | - |
dc.citation.woscount | 36 | - |
顯示於類別: | 期刊論文 |