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dc.contributor.authorChen, LCen_US
dc.contributor.authorLu, TRen_US
dc.contributor.authorKuo, CTen_US
dc.contributor.authorBhusari, DMen_US
dc.contributor.authorWu, JJen_US
dc.contributor.authorChen, KHen_US
dc.contributor.authorChen, TMen_US
dc.date.accessioned2014-12-08T15:48:57Z-
dc.date.available2014-12-08T15:48:57Z-
dc.date.issued1998-06-29en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.121662en_US
dc.identifier.urihttp://hdl.handle.net/11536/32556-
dc.description.abstractCarbon nitride films have been synthesized by argon ion-beam sputtering from a biomolecular compound target, 8-aza-6-aminopurine (C4N6H4) The compound has a six-membered ring structure similar to that existing in the hypothetical beta-C3N4. Except fur the target material, no other source of nitrogen was used during sputtering deposition. It was found that crystalline carbon nitride with high N/C atomic composition ratios of 0.43-0.56 can be formed even at room temperature. The infrared spectra of the film exhibit two peaks at 1383 and 1643 cm(-1), corresponding to C-N and C=N stretching modes, respectively. No detectable peak at 2200 cm(-1) (C=N stretching mode) is observed. Both x-ray diffraction and transmission electron microscopy show a very strong broad peak at 3.2 Angstrom, comparable to the d spacing of the (110) orientation in the beta-C3N4 structure. However, it is suggested that the film contains a nanocrystalline phase with a crystal structure yet to be determined. (C) 1998 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleThe use of a biomolecular target for crystalline carbon nitride film deposition by Ar ion-beam sputtering without any other source of nitrogenen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.121662en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume72en_US
dc.citation.issue26en_US
dc.citation.spage3449en_US
dc.citation.epage3451en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000075274700018-
dc.citation.woscount36-
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