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dc.contributor.authorOu, Jen_US
dc.contributor.authorChen, WKen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorPan, YCen_US
dc.contributor.authorLee, MCen_US
dc.date.accessioned2014-12-08T15:49:00Z-
dc.date.available2014-12-08T15:49:00Z-
dc.date.issued1998-06-01en_US
dc.identifier.issnen_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.37.L633en_US
dc.identifier.urihttp://hdl.handle.net/11536/32578-
dc.description.abstractWe carried out a systematic study on the solid incorporation of InGaN under various growth conditions using metalorganic vapor phase epitaxy (MOVPE). The solid distribution of InGaN was found to be very sensitive to the growth temperature, and the TMGa and TMIn flow rates. Experimental results indicated that at low Ga flow rates InGaN growth is essentially governed by thermodynamic factors, whereas at high growth rate the InGaN solid concentration is determined merely by the vapor composition in the gas phase. In regard to the effect of TMIn flow rates on InGaN growth, it was found that once In droplets form on the surface, the In growth efficiency correspondingly decreases significantly; accounting for the low In solid concentration in InGaN at high TMIn flow rates.en_US
dc.language.isoen_USen_US
dc.subjectInGaNen_US
dc.subjectMOVPEen_US
dc.subjectgrowth efficiencyen_US
dc.titleAn elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.37.L633en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume37en_US
dc.citation.issue6Aen_US
dc.citation.spageL633en_US
dc.citation.epageL636en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000074941400003-
dc.citation.woscount11-
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