標題: | Formation of D(-) centers in GaAs/AlGaAs quantum wells |
作者: | Lee, CH Chang, YH Lin, HH Lee, CP 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-六月-1998 |
摘要: | Three different experiments were employed to study the behaviors of neutral (D(0)) and negatively charged donors (D(-)) in doped GaAs/AlGaAs multiple quantum wells. The existence of the D(-) centers in such structures were demonstrated, and its optical properties were investigated. The spectral responses of such systems under different experimental conditions, such as different barrier doping concentration, different temperature, and different exposure to light illumination were studied. A potential fluctuation model was proposed to explain the experimental results. |
URI: | http://hdl.handle.net/11536/32579 |
ISSN: | 0577-9073 |
期刊: | CHINESE JOURNAL OF PHYSICS |
Volume: | 36 |
Issue: | 3 |
起始頁: | 519 |
結束頁: | 526 |
顯示於類別: | 期刊論文 |