完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, CS | en_US |
dc.contributor.author | Kuo, CT | en_US |
dc.contributor.author | Lin, IN | en_US |
dc.date.accessioned | 2014-12-08T15:49:03Z | - |
dc.date.available | 2014-12-08T15:49:03Z | - |
dc.date.issued | 1998-06-01 | en_US |
dc.identifier.issn | 0884-2914 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32592 | - |
dc.description.abstract | The microwave sintering process not only densified the ZnO materials in a higher rate, but also resulted in significantly better varistor characteristics. Large nonlinear coefficient and low leakage current density were attained by cooling the samples under a rate of 80 degrees C/min after sintering, followed by 600 degrees C postannealing for 60 min under oxygen atmosphere. Inappropriate annealing deteriorated the varistor characteristics that can either be attributed to the insufficient reoxidation along grain boundaries when annealed in N-2 (or air) or loss of Zn species in these regions when annealed at 750 degrees C (900 degrees C). By contrast, the degradation behavior of these materials can be improved by the annealing process regardless of the annealing atmosphere or temperature. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Improvement on the degradation of microwave sintered ZnO varistors by postannealing | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JOURNAL OF MATERIALS RESEARCH | en_US |
dc.citation.volume | 13 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 1560 | en_US |
dc.citation.epage | 1567 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000074063800019 | - |
dc.citation.woscount | 12 | - |
顯示於類別: | 期刊論文 |