Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ezhilvalavan, S | en_US |
dc.contributor.author | Tseng, TY | en_US |
dc.date.accessioned | 2014-12-08T15:49:06Z | - |
dc.date.available | 2014-12-08T15:49:06Z | - |
dc.date.issued | 1998-05-01 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32630 | - |
dc.description.abstract | Electrical properties and leakage current mechanisms of amorphous and polycrystalline tantalum pentoxide (Ta2O5) films were studied. Ta2O5 thin films were deposited on Pt/SiO2/n-Si substrate by reactive magnetron sputtering and then annealed at temperatures ranging from 500 to 800 degrees C for 30 min in O-2. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric constant of about 31 and leakage current density of 10(-10) A/cm(2) at 100 kV/cm. The leakage current flowing through Ta2O5 film increases from 10(-10) to 10(-7) A/cm(2) following the annealing. The conduction mechanism at low electric fields (100 kV/cm) is due to Ohmic conduction. On the other hand Schottky mechanism dominates at the intermediate fields (100-350 kV/cm) and Poole-Frenkel becomes predominant at high fields (>350 kV/cm). The increase in leakage current density in the crystallized film is due to Si penetrated into the Ta2O5 grain and grain boundary from the underlying SiO2/n-Si substrate. (C) 1998 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Conduction mechanisms in amorphous and crystalline Ta2O5 thin films | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 83 | en_US |
dc.citation.issue | 9 | en_US |
dc.citation.spage | 4797 | en_US |
dc.citation.epage | 4801 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000073523900036 | - |
dc.citation.woscount | 75 | - |
Appears in Collections: | Articles |