完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsieh, LZ | en_US |
dc.contributor.author | Huang, JH | en_US |
dc.contributor.author | Su, ZA | en_US |
dc.contributor.author | Wu, MC | en_US |
dc.date.accessioned | 2014-12-08T15:49:15Z | - |
dc.date.available | 2014-12-08T15:49:15Z | - |
dc.date.issued | 1998-03-15 | en_US |
dc.identifier.issn | en_US | |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.37.L319 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32728 | - |
dc.description.abstract | The precipitation of arsenic in alternately [Si]=1.0 x 10(13) cm(-2) and [Be]=1.0 x 10(14) cm(-2) delta-doped GaAs grown at low temperature by molecular beam epitaxy has been studied using transmission electron microscopy. Following annealing at 600, 700 and 800 degrees C, As precipitates were found to form preferentially not only on planes of Si but also on planes of Be. The as-grown and annealed samples were also characterized using secondary ion mass spectroscopy, and the results revealed that the interdiffusion of Si and Be dopants due to annealing was discernible. This is the first observation of As precipitate accumulation on Be delta-doped planes in low-temperature grown GaAs. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | As precipitate | en_US |
dc.subject | low-temperature-grown GaAs | en_US |
dc.subject | molecular beam epitaxy | en_US |
dc.subject | transmission electron microscopy | en_US |
dc.title | Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxy | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.37.L319 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
dc.citation.volume | 37 | en_US |
dc.citation.issue | 3B | en_US |
dc.citation.spage | L319 | en_US |
dc.citation.epage | L321 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000073521900006 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |