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dc.contributor.authorTsai, Chih-Haoen_US
dc.contributor.authorPan, Fu-Mingen_US
dc.contributor.authorLo, Hsiang-Yuen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorKuo, Yi-Tingen_US
dc.contributor.authorChao, Hsueh-Yung (Robert)en_US
dc.contributor.authorLo, Kuo-Chungen_US
dc.contributor.authorJiang, Mei-Tsaoen_US
dc.contributor.authorMo, Chi-Nengen_US
dc.date.accessioned2014-12-08T15:49:15Z-
dc.date.available2014-12-08T15:49:15Z-
dc.date.issued2008en_US
dc.identifier.issn0097-966Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/32742-
dc.description.abstractA novel nanometer scaled gap in palladium thin film strip was prepared by hydrogen absorption under high pressure conditions, and implemented in the fabrication of the surface conduction electron emitter (SCE) for flat panel display applications. The lattice constant increase in the Pd due to the phase transformation from the a-phase to the beta-phase after hydrogen absorption, a large compressive stress occurred to the Pd thin film. With a proper geometric arrangement of the Pd/Pt/Ti emitter electrode of the SCE structure, a single nanogap per SCE device was prepared. Finite element analysis was carried out to study the hydrostatic stress distribution in the thin film emitter structure after Pd hydrogenation, and thereby the optimized thickness of thin film electrodes of the emitter Was determined for the nanogap fabrication. The novel SCE emitter had an inclined protrusion structure on the cathode, which greatly enhance the local electrical field and improve electron beam focusing. The experimental measurement and theoretical analysis show that field emission properties of the novel SCE are superior to conventional SCE with the coplanar cathode.en_US
dc.language.isoen_USen_US
dc.titleNovel surface conduction electron emitter (SCE) nanogaps for field emission displaysen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-IIIen_US
dc.citation.volume39en_US
dc.citation.spage159en_US
dc.citation.epage162en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000258530100041-
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