完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ho, Meng-Huan | en_US |
dc.contributor.author | Hsieh, Ming-Ta | en_US |
dc.contributor.author | Chen, Jenn-Fang | en_US |
dc.contributor.author | Hwang, Shiao-Wen | en_US |
dc.contributor.author | Chen, Chin H. | en_US |
dc.date.accessioned | 2014-12-08T15:49:19Z | - |
dc.date.available | 2014-12-08T15:49:19Z | - |
dc.date.issued | 2008 | en_US |
dc.identifier.issn | 0097-966X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32786 | - |
dc.description.abstract | An efficient n-doped electron transport layer composed of 4,7-diphenyl- 1, 10-phenanthroline (BPhen) and dipotassium phthalate (PAK2) has been developed. By temperature-dependent admittance spectroscopy, the incorporation of PAK2 into BPhen is found to increase electron concentration in BPhen laYer, resulting in raising the Fermi-level to similar to 0.5 eV below its LUMO which further enhances the efficiency of electron injection from Al cathode. When this n-doped layer is adopted in OLED device, the green Alq(3) device can achieve a current efficiency of 3.6 cd/A and a power efficiency of 2.1 lm/W at 20 mA/cm(2) and lower drive voltage of 5.3 V. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Efficient electron injection in organic light-emitting diodes using dipotassium phthalate as n-type dopant | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III | en_US |
dc.citation.volume | 39 | en_US |
dc.citation.spage | 2056 | en_US |
dc.citation.epage | 2059 | en_US |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:000258530100531 | - |
顯示於類別: | 會議論文 |