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dc.contributor.authorChen, LPen_US
dc.contributor.authorChan, YCen_US
dc.contributor.authorChang, SJen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:49:23Z-
dc.date.available2014-12-08T15:49:23Z-
dc.date.issued1998-02-01en_US
dc.identifier.issnen_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.37.L122en_US
dc.identifier.urihttp://hdl.handle.net/11536/32827-
dc.description.abstractOxidation of Si1-xGex films has been carried out by direct photo chemical Vapor deposition (direct photo-CVD) directly with activated O-2 induced by Vacuum-Ultra-Violet (VUV) light radiation, The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed, This might be the reason that Cc pileup effect is eliminated in this study.en_US
dc.language.isoen_USen_US
dc.subjectSiGeen_US
dc.subjectphoto-CVDen_US
dc.subjectVUVen_US
dc.subjectAuger profileen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.titleDirect oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygenen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.37.L122en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume37en_US
dc.citation.issue2Aen_US
dc.citation.spageL122en_US
dc.citation.epageL124en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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