Phonon-plasmon interaction in GaN films studied by Raman scattering

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Shen, CC	en_US
dc.contributor.author	Shu, CK	en_US
dc.contributor.author	Lin, HC	en_US
dc.contributor.author	Chen, WK	en_US
dc.contributor.author	Chen, WH	en_US
dc.contributor.author	Lee, MC	en_US
dc.date.accessioned	2014-12-08T15:49:23Z	-
dc.date.available	2014-12-08T15:49:23Z	-
dc.date.issued	1998-02-01	en_US
dc.identifier.issn	0577-9073	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32828	-
dc.description.abstract	GaN films of different buffer thicknesses (from 0 to 600 Angstrom) were grown on (0001) sapphire using MOCVD. The epitaxial films show autodoping with carrier concentration ranging from 8 x 10(16) to 5 x 10(17) cm(-3) as determined by Hall measurements. The Raman scattering reveals that the A(1)(LO) mode shifts from 733 to 740 cm(-1) as a result of the phonon-plasmon interaction.	en_US
dc.language.iso	en_US	en_US
dc.subject	optical properties and materials	en_US
dc.subject	infrared and Raman spectra and scattering	en_US
dc.title	Phonon-plasmon interaction in GaN films studied by Raman scattering	en_US
dc.type	Article	en_US
dc.identifier.journal	CHINESE JOURNAL OF PHYSICS	en_US
dc.citation.volume	36	en_US
dc.citation.issue	1	en_US
dc.citation.spage	27	en_US
dc.citation.epage	31	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000071887500004	-
dc.citation.woscount	3	-
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