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dc.contributor.authorHsu, Yu-Yingen_US
dc.contributor.authorLin, Kao-Chaoen_US
dc.contributor.authorChen, Hsia-Weien_US
dc.contributor.authorJuan, Chuan-Pingen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:49:23Z-
dc.date.available2014-12-08T15:49:23Z-
dc.date.issued2008en_US
dc.identifier.issn0097-966Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/32830-
dc.description.abstractA method for synthesis of CNTs at low temperature using thermal CVD is proposed. A multi-layered catalyst, Co/Ti/Al, has been successfully utilized to synthesize carbon nanotubes at 500 square by thermal CVD via modifying the flow rate of reaction gases. The flow rates of ethylene, hydrogen, and nitrogen are determined to he 125, 10, and 1000 sccm to improve the growth and field emission characteristics of CNTs at low temperature. Moreover, a novel self-focusing gated device was proposed to resolve the problem of electron beam divergence.en_US
dc.language.isoen_USen_US
dc.titleCarbon nanotubes synthesized at low temperature and a novel self-focusing gated field emission deviceen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-IIIen_US
dc.citation.volume39en_US
dc.citation.spage62en_US
dc.citation.epage65en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000258530100016-
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