完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsu, Yu-Ying | en_US |
dc.contributor.author | Lin, Kao-Chao | en_US |
dc.contributor.author | Chen, Hsia-Wei | en_US |
dc.contributor.author | Juan, Chuan-Ping | en_US |
dc.contributor.author | Cheng, Huang-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:49:23Z | - |
dc.date.available | 2014-12-08T15:49:23Z | - |
dc.date.issued | 2008 | en_US |
dc.identifier.issn | 0097-966X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32830 | - |
dc.description.abstract | A method for synthesis of CNTs at low temperature using thermal CVD is proposed. A multi-layered catalyst, Co/Ti/Al, has been successfully utilized to synthesize carbon nanotubes at 500 square by thermal CVD via modifying the flow rate of reaction gases. The flow rates of ethylene, hydrogen, and nitrogen are determined to he 125, 10, and 1000 sccm to improve the growth and field emission characteristics of CNTs at low temperature. Moreover, a novel self-focusing gated device was proposed to resolve the problem of electron beam divergence. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Carbon nanotubes synthesized at low temperature and a novel self-focusing gated field emission device | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III | en_US |
dc.citation.volume | 39 | en_US |
dc.citation.spage | 62 | en_US |
dc.citation.epage | 65 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000258530100016 | - |
顯示於類別: | 會議論文 |