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dc.contributor.authorTSAI, KLen_US
dc.contributor.authorCHANG, KHen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorHUANG, KFen_US
dc.contributor.authorCHANG, Yen_US
dc.contributor.authorFAN, JCen_US
dc.contributor.authorLIU, DGen_US
dc.date.accessioned2014-12-08T15:04:47Z-
dc.date.available2014-12-08T15:04:47Z-
dc.date.issued1992-09-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.351590en_US
dc.identifier.urihttp://hdl.handle.net/11536/3288-
dc.description.abstractInfluence of a thin protective but subsequently evaporated InAs layer on the regrowth of AlGaAs has been studied. It was found tha although most of the InAs could be evaporated by thermal desorption, some would react with Al0.36Ga0.64As to form InAlGaAs. These InAlGaAs islands act as potential wells for carrier recombination and dominate the photoluminescence spectrum. Transmission electron microscopy photographs show that dislocations are formed near the islands. These defects are caused by lattice mismatch between AlGaAs and InAlGaAs. These islands and defects strongly affect the optical quality of surrounding Al0.36Ga0.64As and quantum wells.en_US
dc.language.isoen_USen_US
dc.titleINFLUENCE OF THIN PROTECTIVE INAS LAYERS ON THE OPTICAL-QUALITY OF ALGAAS AND QUANTUM-WELLSen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.351590en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume72en_US
dc.citation.issue6en_US
dc.citation.spage2449en_US
dc.citation.epage2452en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1992JN51200051-
dc.citation.woscount1-
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