THE EFFECT OF TEMPERATURE ON I-V-CHARACTERISTICS OF A-SI-H PHOTODIODE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHANG, KL	en_US
dc.contributor.author	YEH, CF	en_US
dc.date.accessioned	2014-12-08T15:04:47Z	-
dc.date.available	2014-12-08T15:04:47Z	-
dc.date.issued	1992-09-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3294	-
dc.description.abstract	A 16-bit/mm, high-resolution, Schottky a-Si:H photodiode linear sensor array was fabricated, and the effect of temperature on its I-V characteristics was studied. Annealing the a-Si:H photodiodes at 200-degrees-C in air for 30 minutes lowered the dark current and improved the I(p)/I(d). Under reverse bias, the dark current increased with temperature and doubled for every 8.89-degrees-C rise, while the photocurrent showed few effects below 100-degrees-C.	en_US
dc.language.iso	en_US	en_US
dc.subject	HYDROGENATED AMORPHOUS SILICON (A-SI-H)	en_US
dc.subject	PHOTODIODE	en_US
dc.subject	DARK CURRENT	en_US
dc.subject	PHOTOCURRENT	en_US
dc.subject	BARRIER	en_US
dc.title	THE EFFECT OF TEMPERATURE ON I-V-CHARACTERISTICS OF A-SI-H PHOTODIODE	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	31	en_US
dc.citation.issue	9A	en_US
dc.citation.spage	L1226	en_US
dc.citation.epage	L1228	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1992JM28200005	-
dc.citation.woscount	2	-
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