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dc.contributor.authorTSUI, BYen_US
dc.contributor.authorCHEN, MCen_US
dc.date.accessioned2014-12-08T15:04:48Z-
dc.date.available2014-12-08T15:04:48Z-
dc.date.issued1992-09-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/0038-1101(92)90152-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/3303-
dc.description.abstractThe specific contact resistance (rho(c)) of PtSi/p+ and PtSi/n+ contacts formed by ion implantation through Pt or PtSi was studied. A simple process to form self-aligned six-terminal Kelvin structure was developed in order to measure the specific contact resistance. For the PtSi/p+ contact system, a rho(c) lower than 1 x 10(-6) OMEGA-cm2 was achieved by BF2+ implantation at 40 keV to a dose of 5 x 10(15) cm-2. Increase of dose or energy could further decrease the rho(c) to be lower than 5 x 10(-7) OMEGA-cm2. The rho(c) of the PtSi/n+ contact system was lower than that of the PtSi/p+ contact system and a rho(c) of 1 x 10(-7) OMEGA-cm2 was obtained. These results indicate that although the PtSi-contacted junction is formed at temperatures lower than 800-degrees-C, the rho(c) is low enough to satisfy the requirements of submicrometer technology. We suggest that PtSi should be a favorable material to form shallow junctions and contacts simultaneously for future VLSI processes and to satisfy low thermal budget requirement.en_US
dc.language.isoen_USen_US
dc.titleCONTACT RESISTIVITY OF SHALLOW JUNCTIONS FORMED BY IMPLANTATION THROUGH PT OR PTSIen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/0038-1101(92)90152-3en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume35en_US
dc.citation.issue9en_US
dc.citation.spage1217en_US
dc.citation.epage1222en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1992JG95000004-
dc.citation.woscount2-
Appears in Collections:Articles