標題: CONTACT RESISTIVITY OF SHALLOW JUNCTIONS FORMED BY IMPLANTATION THROUGH PT OR PTSI
作者: TSUI, BY
CHEN, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Sep-1992
摘要: The specific contact resistance (rho(c)) of PtSi/p+ and PtSi/n+ contacts formed by ion implantation through Pt or PtSi was studied. A simple process to form self-aligned six-terminal Kelvin structure was developed in order to measure the specific contact resistance. For the PtSi/p+ contact system, a rho(c) lower than 1 x 10(-6) OMEGA-cm2 was achieved by BF2+ implantation at 40 keV to a dose of 5 x 10(15) cm-2. Increase of dose or energy could further decrease the rho(c) to be lower than 5 x 10(-7) OMEGA-cm2. The rho(c) of the PtSi/n+ contact system was lower than that of the PtSi/p+ contact system and a rho(c) of 1 x 10(-7) OMEGA-cm2 was obtained. These results indicate that although the PtSi-contacted junction is formed at temperatures lower than 800-degrees-C, the rho(c) is low enough to satisfy the requirements of submicrometer technology. We suggest that PtSi should be a favorable material to form shallow junctions and contacts simultaneously for future VLSI processes and to satisfy low thermal budget requirement.
URI: http://dx.doi.org/10.1016/0038-1101(92)90152-3
http://hdl.handle.net/11536/3303
ISSN: 0038-1101
DOI: 10.1016/0038-1101(92)90152-3
期刊: SOLID-STATE ELECTRONICS
Volume: 35
Issue: 9
起始頁: 1217
結束頁: 1222
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