FLUX MOTION DEPENDENCE OF RESISTIVE PROPERTIES IN SUPERCONDUCTING YBA2CU3O7-X THIN-FILMS

doi:10.1063/1.351825

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	HAUNG, CJ	en_US
dc.contributor.author	CHEN, YC	en_US
dc.contributor.author	TSENG, TY	en_US
dc.date.accessioned	2014-12-08T15:04:49Z	-
dc.date.available	2014-12-08T15:04:49Z	-
dc.date.issued	1992-08-01	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.351825	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3323	-
dc.description.abstract	Two models of flux motion are employed to study the resistive properties of superconducting YBa2Cu3O7-x thin films. The thermally activated flux creep model is employed to explain the dissipative behavior in the low resistivity region. However, when the resistivity is raised and approaches the normal state resistivity, the dissipative mechanism is gradually transferred from flux creep to flux flow. Based on the flux flow model, the upper critical field is estimated and shown as a function of temperature. In addition, a parallel resistivity circuit model is proposed to describe the transition behavior of the magnetic field dependence of resistivity versus current density characteristics.	en_US
dc.language.iso	en_US	en_US
dc.title	FLUX MOTION DEPENDENCE OF RESISTIVE PROPERTIES IN SUPERCONDUCTING YBA2CU3O7-X THIN-FILMS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.351825	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	72	en_US
dc.citation.issue	3	en_US
dc.citation.spage	1007	en_US
dc.citation.epage	1012	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1992JF86800028	-
dc.citation.woscount	1	-
顯示於類別：	期刊論文