完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | LOONG, WA | en_US |
dc.contributor.author | WANG, TH | en_US |
dc.date.accessioned | 2014-12-08T15:04:50Z | - |
dc.date.available | 2014-12-08T15:04:50Z | - |
dc.date.issued | 1992-08-01 | en_US |
dc.identifier.issn | 0167-9317 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/3347 | - |
dc.description.abstract | Bi-layer resist processes for deep-UV and oxygen plasma are studied. Poly(dimethyl-co-diphenylsilane) is used as both deep-UV and oxygen plasma portable conformable masks because of its strong deep-UV and i-line (365 nm) absorption and its resistance to oxygen plasma. The bottom layer is P(MMA-PhPK), a copolymer of methylmethacrylate and 30 wt% of phenylpropenylketone, for the positive-tone pattern. P(MMA-PhPK) has greater deep-UV exposure sensitivity compared to PMMA. Good vertical sidewall profiles of lines of bottom layers are obtained. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | POLY(DIMETHYL-CO-DIPHENYLSILANE) | en_US |
dc.subject | POLY(METHYLMETHACRYLATE-CO-PHENYLPROPENYLKETONE) | en_US |
dc.subject | PORTABLE CONFORMABLE MASK | en_US |
dc.subject | BILAYER RESIST | en_US |
dc.title | POLY(DIMETHYL-CO-DIPHENYLSILANE) AS A DEEP-UV AND AN OXYGEN PLASMA PORTABLE CONFORMABLE MASK | en_US |
dc.type | Article | en_US |
dc.identifier.journal | MICROELECTRONIC ENGINEERING | en_US |
dc.citation.volume | 18 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 207 | en_US |
dc.citation.epage | 214 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:A1992JQ84900001 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |