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dc.contributor.authorLOONG, WAen_US
dc.contributor.authorWANG, THen_US
dc.date.accessioned2014-12-08T15:04:50Z-
dc.date.available2014-12-08T15:04:50Z-
dc.date.issued1992-08-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://hdl.handle.net/11536/3347-
dc.description.abstractBi-layer resist processes for deep-UV and oxygen plasma are studied. Poly(dimethyl-co-diphenylsilane) is used as both deep-UV and oxygen plasma portable conformable masks because of its strong deep-UV and i-line (365 nm) absorption and its resistance to oxygen plasma. The bottom layer is P(MMA-PhPK), a copolymer of methylmethacrylate and 30 wt% of phenylpropenylketone, for the positive-tone pattern. P(MMA-PhPK) has greater deep-UV exposure sensitivity compared to PMMA. Good vertical sidewall profiles of lines of bottom layers are obtained.en_US
dc.language.isoen_USen_US
dc.subjectPOLY(DIMETHYL-CO-DIPHENYLSILANE)en_US
dc.subjectPOLY(METHYLMETHACRYLATE-CO-PHENYLPROPENYLKETONE)en_US
dc.subjectPORTABLE CONFORMABLE MASKen_US
dc.subjectBILAYER RESISTen_US
dc.titlePOLY(DIMETHYL-CO-DIPHENYLSILANE) AS A DEEP-UV AND AN OXYGEN PLASMA PORTABLE CONFORMABLE MASKen_US
dc.typeArticleen_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume18en_US
dc.citation.issue3en_US
dc.citation.spage207en_US
dc.citation.epage214en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:A1992JQ84900001-
dc.citation.woscount1-
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