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dc.contributor.authorCHEN, FHen_US
dc.contributor.authorKOO, HSen_US
dc.contributor.authorWU, SCen_US
dc.contributor.authorTSENG, TYen_US
dc.contributor.authorHORNG, SRen_US
dc.contributor.authorTAI, MFen_US
dc.date.accessioned2014-12-08T15:04:51Z-
dc.date.available2014-12-08T15:04:51Z-
dc.date.issued1992-07-01en_US
dc.identifier.issn0921-4534en_US
dc.identifier.urihttp://hdl.handle.net/11536/3367-
dc.description.abstractPb-doped Bi-Sr-Ca-Cu high-T(c) superconducting oxides have been prepared by a modified sol-gel process via the EDTA route. Upon decomposing the X-ray photoemission spectrum of the Cu 2p3/2 core level of the superconducting oxide into three components Cu1+, Cu2+ and Cu3+, we have found an obvious trend: the corresponding [Cu1+]/[Cu2+] ratio increased as more 110 K phase was formed in the sample. According to this trend, a defect model was proposed; it can reasonably explain some previous experimental results, such as a reduced oxygen atmosphere sintering, which effectively facilitates the formation of the 110 K phase, and the coexistence of copper and oxygen vacancies in Bi-system superconductors, observed by high-resolution transmission electron microscopy. On the other hand, the dimerization of holes in oxygen sites was also suggested to be a possible mechanism responsible for the increase in the ratio of [Cu1+]/[Cu2+].en_US
dc.language.isoen_USen_US
dc.titleCOPPER VALENCY OF SUPERCONDUCTING PHASES IN THE PB-DOPED BI-SR-CA-CU-O SYSTEMen_US
dc.typeArticleen_US
dc.identifier.journalPHYSICA Cen_US
dc.citation.volume197en_US
dc.citation.issue1-2en_US
dc.citation.spage151en_US
dc.citation.epage156en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1992JE33700025-
dc.citation.woscount3-
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