完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCHUU, DSen_US
dc.contributor.authorDAI, CMen_US
dc.date.accessioned2019-04-03T06:37:37Z-
dc.date.available2019-04-03T06:37:37Z-
dc.date.issued1992-05-15en_US
dc.identifier.issn0163-1829en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.45.11805en_US
dc.identifier.urihttp://hdl.handle.net/11536/3418-
dc.description.abstractResonant Raman spectroscopy is used to study quantum size effects in CdS films. The lattice softening of the CdS LO-phonon mode in a CdS film with a thickness less than 800 angstrom is observed. As the thickness is less than 410 angstrom, the TO-phonon mode is observed at 4880 angstrom excitation wavelength, which is above the band gap of bulk CdS (2.42 eV) at room temperature. These phenomena are attributed to the size quantization effects of the grain size and the low-dimensional thin-film structure. The quantum size effects cause a blueshift of the band gap in the as-deposited CdS thin film. The peak of the TO-phonon-mode Raman line of the CdS film is observed around 220 cm-1, which has a shift of 8 cm-1 from the Raman line of the most active TO-phonon mode of bulk CdS. The magnitude of softening energy of the TO-phonon mode is observed to be independent of the film thickness.en_US
dc.language.isoen_USen_US
dc.titleQUANTUM SIZE EFFECTS IN CDS THIN-FILMSen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.45.11805en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume45en_US
dc.citation.issue20en_US
dc.citation.spage11805en_US
dc.citation.epage11810en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1992HV74700038en_US
dc.citation.woscount70en_US
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