標題: | THE EFFECTS OF GASB/INAS BROKEN GAP ON INTERBAND TUNNELING CURRENT OF A GASB/INAS/GASB/ALSB/INAS TUNNELING STRUCTURE |
作者: | CHEN, JF CHO, AY 電子物理學系 Department of Electrophysics |
公開日期: | 1-五月-1992 |
摘要: | We propose and study a new GaSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling diode by varying the thicknesses of the InAs layer. A twice-higher peak current density and a three-times-higher peak-to-valley current ratio in the proposed structure with a 30-angstrom-thick InAs layer were observed relative to the structure with no InAs layer. This result indicates that the characteristic of the negative differential resistance can be improved simply by placing a thin effective InAs barrier on the GaSb side of the GaSb/AlSb/InAs single-barrier structure. The increase of the peak current is interpreted as the result of forming a quasi-bound state in the GaSb well. This interpretation is supported by the observation that the current-voltage characteristic of the proposed structure is similar to that of a conventional GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structure. |
URI: | http://dx.doi.org/10.1063/1.350783 http://hdl.handle.net/11536/3423 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.350783 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 71 |
Issue: | 9 |
起始頁: | 4432 |
結束頁: | 4435 |
顯示於類別: | 期刊論文 |