標題: THE EFFECTS OF GASB/INAS BROKEN GAP ON INTERBAND TUNNELING CURRENT OF A GASB/INAS/GASB/ALSB/INAS TUNNELING STRUCTURE
作者: CHEN, JF
CHO, AY
電子物理學系
Department of Electrophysics
公開日期: 1-May-1992
摘要: We propose and study a new GaSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling diode by varying the thicknesses of the InAs layer. A twice-higher peak current density and a three-times-higher peak-to-valley current ratio in the proposed structure with a 30-angstrom-thick InAs layer were observed relative to the structure with no InAs layer. This result indicates that the characteristic of the negative differential resistance can be improved simply by placing a thin effective InAs barrier on the GaSb side of the GaSb/AlSb/InAs single-barrier structure. The increase of the peak current is interpreted as the result of forming a quasi-bound state in the GaSb well. This interpretation is supported by the observation that the current-voltage characteristic of the proposed structure is similar to that of a conventional GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structure.
URI: http://dx.doi.org/10.1063/1.350783
http://hdl.handle.net/11536/3423
ISSN: 0021-8979
DOI: 10.1063/1.350783
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 71
Issue: 9
起始頁: 4432
結束頁: 4435
Appears in Collections:Articles