完整後設資料紀錄
DC 欄位語言
dc.contributor.authorJUANG, MHen_US
dc.contributor.authorCHENG, HCen_US
dc.date.accessioned2014-12-08T15:04:55Z-
dc.date.available2014-12-08T15:04:55Z-
dc.date.issued1992-04-27en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.107099en_US
dc.identifier.urihttp://hdl.handle.net/11536/3449-
dc.description.abstractThe effects of rapid thermal annealing (RTA) and laser annealing (LA) on the activation and diffusion of ion-implanted boron in Si substrate have been investigated. The implant and anneal regimes, forming good shallow junctions, were presented. The Si+ -preamorphized samples boron implanted with a high dosage showed largely enhanced diffusion in RTA processing. The LA process serves as an excellent scheme to effectively activate the dopant and suppress the anomalous diffusion because of its very high heating rate. A high-quality p+/n junction with a leakage current density lower than 2 nA/cm2 and a forward ideality factor of about 1.01 was formed by laser processing.en_US
dc.language.isoen_USen_US
dc.titleFORMATION OF P(+)N JUNCTIONS BY SI(+)+B(+) IMPLANTATION AND LASER ANNEALINGen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.107099en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume60en_US
dc.citation.issue17en_US
dc.citation.spage2092en_US
dc.citation.epage2094en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1992HQ50000017-
dc.citation.woscount6-
顯示於類別:期刊論文