標題: | INFLUENCE OF IMPLANT CONDITION ON THE TRANSIENT-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN SILICON |
作者: | JUANG, MH WAN, FS LIU, HW CHENG, KL CHENG, HC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 15-三月-1992 |
摘要: | Under high-dosage boron implant, the implant condition was found to be important for reducing the transient-enhanced diffusion of boron in Si and forming shallow p + n junction with good rectifying characteristics as well as high dopant concentration in the diffused region. The BF2+-implantation resulted in not only an excellent dopant activation but also a reduced anomalous diffusion due to the formation of amorphous layer and the scarce defects underneath the amorphous/crystalline (a/c) interface. The B+-implanted crystalline samples manifested a poor activation efficiency, and a largely anomalous diffusion at the high temperature with prolonged-time annealing ascribed to much damage induced by the high-dose implant. The B+-implanted pre-Si+-amorphized samples also displayed severely transient-enhanced diffusion in spite of the good dopant activation. |
URI: | http://dx.doi.org/10.1063/1.351082 http://hdl.handle.net/11536/3484 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.351082 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 71 |
Issue: | 6 |
起始頁: | 2611 |
結束頁: | 2614 |
顯示於類別: | 期刊論文 |