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dc.contributor.authorTsai, WCen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorJung, TGen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorChen, LPen_US
dc.date.accessioned2014-12-08T15:01:31Z-
dc.date.available2014-12-08T15:01:31Z-
dc.date.issued1997-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.36.5680en_US
dc.identifier.urihttp://hdl.handle.net/11536/351-
dc.description.abstractHigh-quality Si/Si1-xGex strained-layer superlattices have been grown in the temperature range 525 degrees C-550 degrees C by ultrahigh vacuum chemical vapor deposition. We employed X-ray reflection and high-resolution double-crystal X-ray diffraction measurements to study the dimensional and compositional variations in a Si/Si1-xGex superlattice. From the X-ray reflection results, the interfacial roughness of Si layers on SiGe, and SiGe layers on Si, is 0.1nm for growth at 525 degrees C and 0.2nm for growth at 550 degrees C. A simple model for estimating the interfacial abruptness of Si/Si1-xGex heterojunctions is proposed. In this model, a transition region with a linearly graded Ge composition is assumed to exist at both Si/Si1-xGex interfaces. The Ge composition x of a Si/Si1-xGex superlattice is found to increase with the growth time at a constant gas phase composition. This phenomenon can be explained by this model, and the thickness of the transition region and the transition time can be extracted from these fitting results. The transition thicknesses are found to be about 0.3-0.7nm for growth at 525 degrees C and 1-1.5nm for growth at 550 degrees C.en_US
dc.language.isoen_USen_US
dc.subjectabruptnessen_US
dc.subjectheteroepitaxyen_US
dc.subjectsuperlatticeen_US
dc.subjectX-ray reflectionen_US
dc.subjectroughnessen_US
dc.titleInterfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.36.5680en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume36en_US
dc.citation.issue9Aen_US
dc.citation.spage5680en_US
dc.citation.epage5687en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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