Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | CHEN, YF | en_US |
dc.contributor.author | KEWI, CM | en_US |
dc.contributor.author | TUNG, CJ | en_US |
dc.date.accessioned | 2014-12-08T15:05:00Z | - |
dc.date.available | 2014-12-08T15:05:00Z | - |
dc.date.issued | 1992-02-14 | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0022-3727/25/2/020 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/3522 | - |
dc.description.abstract | The electron inelastic mean free path is of basic importance in theoretical and applied radiation physics and surface physics. It can be calculated using the dielectric function for the valence band and atomic generalized oscillator strengths tor inner shells of a solid. Although the experimentally determined attenuation length is conceptually different from the theoretically calculated mean free path, they are frequently used interchangeably in a loosely defined manner. For electrons with energies below a few keV, elastic scattering plays an important role in connecting these two quantities. This work employed elastic scattering cross sections derived using the partial wave expansion method with a solid potential to evaluate the path length distribution of an electron transmitted through a solid film. Both the analytical multiple-scattering formulation and the numerical Monte Carlo simulation have been applied in this investigation. A comparison between electron inelastic mean free paths and attenuation lengths was made. | en_US |
dc.language.iso | en_US | en_US |
dc.title | ELECTRON INELASTIC MEAN FREE PATHS VERSUS ATTENUATION LENGTHS IN SOLIDS | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0022-3727/25/2/020 | en_US |
dc.identifier.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | en_US |
dc.citation.volume | 25 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 262 | en_US |
dc.citation.epage | 268 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1992HE54000020 | - |
dc.citation.woscount | 19 | - |
Appears in Collections: | Articles |
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