完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | JUANG, MH | en_US |
dc.contributor.author | CHENG, HC | en_US |
dc.date.accessioned | 2014-12-08T15:05:00Z | - |
dc.date.available | 2014-12-08T15:05:00Z | - |
dc.date.issued | 1992-02-01 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.351269 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/3525 | - |
dc.description.abstract | High-quality Ti-silicided shallow p+ n junctions have been fabricated by implanting BF2+ ions into thin Ti films on Si substrate and subsequent silicidation/drive-in by rapid thermal annealing (RTA) or conventional furnace annealing (CFA) under proper implant and anneal conditions. For both the RTA and CFA techniques, annealing temperatures higher than 800-degrees-C degrade the junction formation because of more severe dopant confinement within the silicides and more serious diffusion of knock-on Ti into junction regions. The high-dose implant greatly enhanced the dopant activation and thus improved the junctions. The high heating rate for RTA caused an immediate formation of Ti-B compounds at high temperatures, while CFA considerably promoted the drive-in efficiency because of its low heating rates and long annealing times. Hence, CFA yielded better low-bias rectifying characteristics than RTA due to larger dopant activation. However, CFA caused much worse high reverse-bias characteristics. A rapid increase of reverse currents with bias voltage was observed for the CFA-treated samples, indicating a severe Ti penetration due to long annealing times. | en_US |
dc.language.iso | en_US | en_US |
dc.title | EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .1. THIN TITANIUM FILMS | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.351269 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 71 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 1265 | en_US |
dc.citation.epage | 1270 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1992HC90800029 | - |
dc.citation.woscount | 15 | - |
顯示於類別: | 期刊論文 |