完整後設資料紀錄
DC 欄位語言
dc.contributor.authorJUANG, MHen_US
dc.contributor.authorCHENG, HCen_US
dc.date.accessioned2014-12-08T15:05:00Z-
dc.date.available2014-12-08T15:05:00Z-
dc.date.issued1992-02-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.351269en_US
dc.identifier.urihttp://hdl.handle.net/11536/3525-
dc.description.abstractHigh-quality Ti-silicided shallow p+ n junctions have been fabricated by implanting BF2+ ions into thin Ti films on Si substrate and subsequent silicidation/drive-in by rapid thermal annealing (RTA) or conventional furnace annealing (CFA) under proper implant and anneal conditions. For both the RTA and CFA techniques, annealing temperatures higher than 800-degrees-C degrade the junction formation because of more severe dopant confinement within the silicides and more serious diffusion of knock-on Ti into junction regions. The high-dose implant greatly enhanced the dopant activation and thus improved the junctions. The high heating rate for RTA caused an immediate formation of Ti-B compounds at high temperatures, while CFA considerably promoted the drive-in efficiency because of its low heating rates and long annealing times. Hence, CFA yielded better low-bias rectifying characteristics than RTA due to larger dopant activation. However, CFA caused much worse high reverse-bias characteristics. A rapid increase of reverse currents with bias voltage was observed for the CFA-treated samples, indicating a severe Ti penetration due to long annealing times.en_US
dc.language.isoen_USen_US
dc.titleEFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .1. THIN TITANIUM FILMSen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.351269en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume71en_US
dc.citation.issue3en_US
dc.citation.spage1265en_US
dc.citation.epage1270en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1992HC90800029-
dc.citation.woscount15-
顯示於類別:期刊論文