標題: | A NOVEL TECHNIQUE FOR LOW-THRESHOLD AND HIGH-POWER INGAAS/GAAS STRAINED-LAYER 0.98-MU-M BURIED HETEROSTRUCTURE LASER FABRICATION |
作者: | LIOU, DC CHIANG, WH LEE, CP CHANG, KH LIU, DG WU, JS TU, YK 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
公開日期: | 1-二月-1992 |
摘要: | A novel fabrication technique has been developed for InGaAs/GaAs strained-layer buried heterostructure lasers. Dielectric masks and Zn diffusion are not required in this technique. This novel fabrication process is much easier than the conventional approach and yields excellent laser results. A low threshold of 3 mA and high-power operation for lasing wavelength of 9800 +/- 20 angstrom have been achieved with graded index separate confinement heterostructure devices using this novel technique. |
URI: | http://dx.doi.org/10.1063/1.351398 http://hdl.handle.net/11536/3527 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.351398 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 71 |
Issue: | 3 |
起始頁: | 1525 |
結束頁: | 1527 |
顯示於類別: | 期刊論文 |