標題: A NOVEL TECHNIQUE FOR LOW-THRESHOLD AND HIGH-POWER INGAAS/GAAS STRAINED-LAYER 0.98-MU-M BURIED HETEROSTRUCTURE LASER FABRICATION
作者: LIOU, DC
CHIANG, WH
LEE, CP
CHANG, KH
LIU, DG
WU, JS
TU, YK
交大名義發表
電控工程研究所
National Chiao Tung University
Institute of Electrical and Control Engineering
公開日期: 1-二月-1992
摘要: A novel fabrication technique has been developed for InGaAs/GaAs strained-layer buried heterostructure lasers. Dielectric masks and Zn diffusion are not required in this technique. This novel fabrication process is much easier than the conventional approach and yields excellent laser results. A low threshold of 3 mA and high-power operation for lasing wavelength of 9800 +/- 20 angstrom have been achieved with graded index separate confinement heterostructure devices using this novel technique.
URI: http://dx.doi.org/10.1063/1.351398
http://hdl.handle.net/11536/3527
ISSN: 0021-8979
DOI: 10.1063/1.351398
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 71
Issue: 3
起始頁: 1525
結束頁: 1527
顯示於類別:期刊論文