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dc.contributor.authorCHEN, FHen_US
dc.contributor.authorKOO, HSen_US
dc.contributor.authorTSENG, TYen_US
dc.date.accessioned2014-12-08T15:05:02Z-
dc.date.available2014-12-08T15:05:02Z-
dc.date.issued1992-01-01en_US
dc.identifier.issn0002-7820en_US
dc.identifier.urihttp://dx.doi.org/10.1111/j.1151-2916.1992.tb05448.xen_US
dc.identifier.urihttp://hdl.handle.net/11536/3555-
dc.description.abstractThe modified sol-gel method using ethylenediaminetetraacetic acid as a chelating agent to prepare high-T(c) superconducting Bi-Pb-Sr-Ca-Cu oxides is reported. Results revealed that the desirable Bi-based compounds can be acquired by such a process with a high percentage of the 110 K phase and a T(c)(zero) of 108 K. On the other hand, a new method is proposed to quantitatively evaluate the volume fraction of the 110 K phase in Bi-based superconducting materials, mainly composed of 85 and 110 K phases. That is a lever-rule type of relation, V = (Y - 29.07-degrees)/(28.81-degrees - 29.07-degrees), where V is the volume fraction of the 110 K phase and Y = 2-theta for the X-ray diffraction peak emerging at about 29-degrees with a CuK-alpha radiation source and 28.81-degrees less-than-or-equal-to Y less-than-or-equal-to 29.07-degrees. The volume fraction of the 2223 phase estimated in this way is more reliable than that estimated by measuring the area ratios of XRD peaks and it is expected to be even more reliable than those derived from conventional methods based on perfect diamagnetism.en_US
dc.language.isoen_USen_US
dc.subjectSUPERCONDUCTORSen_US
dc.subjectPROCESSINGen_US
dc.subjectSOL-GELen_US
dc.subjectORGANIC COMPOUNDSen_US
dc.subjectCHARACTERIZATIONen_US
dc.titleCHARACTERISTICS OF THE HIGH-TC SUPERCONDUCTING BI-PB-SR-CA-CU OXIDES DERIVED FROM AN ETHYLENEDIAMINETETRAACETIC ACID PRECURSORen_US
dc.typeArticleen_US
dc.identifier.doi10.1111/j.1151-2916.1992.tb05448.xen_US
dc.identifier.journalJOURNAL OF THE AMERICAN CERAMIC SOCIETYen_US
dc.citation.volume75en_US
dc.citation.issue1en_US
dc.citation.spage96en_US
dc.citation.epage102en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1992HF19800017-
dc.citation.woscount47-
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