OBSERVATIONS OF A BIFURCATION STRUCTURE IN A RF-DRIVEN SEMICONDUCTOR-LASER USING AN ELECTRONIC SIMULATOR

Abstract

This article presents a realization of electronic circuit to examine the dynamics of the rate equations for a directly modulated semiconductor laser. The dynamic transitions are characterized by observing the phase portraits and time evolutions of photon density and carrier density. Under the proper conditions of modulation depth and modulation frequency, the system reveals the period doubling route and bistability in various resonant regions. These are also confirmed by the numerical simulations.