OBSERVATIONS OF A BIFURCATION STRUCTURE IN A RF-DRIVEN SEMICONDUCTOR-LASER USING AN ELECTRONIC SIMULATOR

doi:10.1063/1.1142654

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	KAO, YH	en_US
dc.contributor.author	TSAI, CH	en_US
dc.contributor.author	WANG, CS	en_US
dc.date.accessioned	2014-12-08T15:05:02Z	-
dc.date.available	2014-12-08T15:05:02Z	-
dc.date.issued	1992-01-01	en_US
dc.identifier.issn	0034-6748	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1142654	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3558	-
dc.description.abstract	This article presents a realization of electronic circuit to examine the dynamics of the rate equations for a directly modulated semiconductor laser. The dynamic transitions are characterized by observing the phase portraits and time evolutions of photon density and carrier density. Under the proper conditions of modulation depth and modulation frequency, the system reveals the period doubling route and bistability in various resonant regions. These are also confirmed by the numerical simulations.	en_US
dc.language.iso	en_US	en_US
dc.title	OBSERVATIONS OF A BIFURCATION STRUCTURE IN A RF-DRIVEN SEMICONDUCTOR-LASER USING AN ELECTRONIC SIMULATOR	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1142654	en_US
dc.identifier.journal	REVIEW OF SCIENTIFIC INSTRUMENTS	en_US
dc.citation.volume	63	en_US
dc.citation.issue	1	en_US
dc.citation.spage	75	en_US
dc.citation.epage	79	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	電信研究中心	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Center for Telecommunications Research	en_US
dc.identifier.wosnumber	WOS:A1992GZ62500011	-
dc.citation.woscount	9	-
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