標題: RAMAN INTENSITY ENHANCEMENT OF THE SI PEAK BY CDS THIN-FILMS
作者: DAI, CM
CHUU, DS
HSIEH, WF
交大名義發表
電子物理學系
National Chiao Tung University
Department of Electrophysics
公開日期: 16-Dec-1991
摘要: A method, which utilizes interference enhanced Raman scattering and resonant Raman scattering techniques, is used to overcome the low efficiency of Raman methods to diagnose highly reflective materials. As applied to the p-type Si wafer, the enhanced gain is up to nearly a factor of 80 at 4880 angstrom excitation. Because of the strong absorption of the scattered light, it is recommended that the suitable deposited thickness of CdS films should not be thicker than 700 angstrom.
URI: http://dx.doi.org/10.1063/1.105728
http://hdl.handle.net/11536/3600
ISSN: 0003-6951
DOI: 10.1063/1.105728
期刊: APPLIED PHYSICS LETTERS
Volume: 59
Issue: 25
起始頁: 3273
結束頁: 3275
Appears in Collections:Articles