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dc.contributor.authorLOONG, WAen_US
dc.contributor.authorCHIU, KDen_US
dc.date.accessioned2014-12-08T15:05:05Z-
dc.date.available2014-12-08T15:05:05Z-
dc.date.issued1991-12-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/6/12/013en_US
dc.identifier.urihttp://hdl.handle.net/11536/3620-
dc.description.abstractTitanium mononitride (TiN) as an antireflection layer over aluminium metallization on a Si wafer (Al/Si) in submicron photolithography has been studied. Both notching and standing wave effects of non-dyed and dyed positive resists coated on TiN/Al/Si are eliminated with 0.8-mu-m designed linewidth test patterns using a g-line stepper under defocus of 0, +1 and -1-mu-m. TiN/Al/Si has a sheet resistivity of about 45 m-OMEGA/square, similar to Al/Si up to tested TiN thickness of 0.12-mu-m. Thus, TiN in the TiN/Al/Si system functions not only as a conventional diffusion barrier, but also as an antireflection layer and as a metallization layer. Selective reactive ion etching between Al and TiN can be achieved in an etchant gas mixture of 3:7 CHF3:CF4 with a DC bias of -100 V.en_US
dc.language.isoen_USen_US
dc.titleTITANIUM MONONITRIDE AS AN ANTIREFLECTION LAYER ON ALUMINUM METALLIZATION FOR SUBMICRON PHOTOLITHOGRAPHIC PATTERNINGen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0268-1242/6/12/013en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.citation.volume6en_US
dc.citation.issue12en_US
dc.citation.spage1170en_US
dc.citation.epage1174en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:A1991GX13700013-
dc.citation.woscount3-
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