完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | LOONG, WA | en_US |
dc.contributor.author | CHIU, KD | en_US |
dc.date.accessioned | 2014-12-08T15:05:05Z | - |
dc.date.available | 2014-12-08T15:05:05Z | - |
dc.date.issued | 1991-12-01 | en_US |
dc.identifier.issn | 0268-1242 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0268-1242/6/12/013 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/3620 | - |
dc.description.abstract | Titanium mononitride (TiN) as an antireflection layer over aluminium metallization on a Si wafer (Al/Si) in submicron photolithography has been studied. Both notching and standing wave effects of non-dyed and dyed positive resists coated on TiN/Al/Si are eliminated with 0.8-mu-m designed linewidth test patterns using a g-line stepper under defocus of 0, +1 and -1-mu-m. TiN/Al/Si has a sheet resistivity of about 45 m-OMEGA/square, similar to Al/Si up to tested TiN thickness of 0.12-mu-m. Thus, TiN in the TiN/Al/Si system functions not only as a conventional diffusion barrier, but also as an antireflection layer and as a metallization layer. Selective reactive ion etching between Al and TiN can be achieved in an etchant gas mixture of 3:7 CHF3:CF4 with a DC bias of -100 V. | en_US |
dc.language.iso | en_US | en_US |
dc.title | TITANIUM MONONITRIDE AS AN ANTIREFLECTION LAYER ON ALUMINUM METALLIZATION FOR SUBMICRON PHOTOLITHOGRAPHIC PATTERNING | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0268-1242/6/12/013 | en_US |
dc.identifier.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 6 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 1170 | en_US |
dc.citation.epage | 1174 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:A1991GX13700013 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |