DEVELOPMENT OF TEMPERATURE-STABLE THICK-FILM DIELECTRICS .3. ROLE OF GLASS ON THE MICROSTRUCTURE EVOLUTION OF A THICK-FILM DIELECTRIC

doi:10.1109/33.83957

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DC 欄位	值	語言
dc.contributor.author	CHIOU, BS	en_US
dc.contributor.author	LIU, KC	en_US
dc.contributor.author	DUH, JG	en_US
dc.contributor.author	CHUNG, MC	en_US
dc.date.accessioned	2014-12-08T15:05:10Z	-
dc.date.available	2014-12-08T15:05:10Z	-
dc.date.issued	1991-09-01	en_US
dc.identifier.issn	0148-6411	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/33.83957	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3695	-
dc.description.abstract	Glass phase plays an important role in the characteristics of thick-film microelectronics. A dielectric system in BaTiO3 and SrTiO3 containing PbO, B2O3, SiO2, and Al2O3 glass constituents is investigated. Microstructure evolution and phase distribution after thermal aging are studied with the aid of electron microscope and X-ray diffractometer. It is observed that the phases in 40 vol% BaTiO3-25 vol% SrTiO3-35 vol% glass thick-film dielectric are not altered after 500-degrees-C aging for 480 h. The variation in surface morphology after long time aging is attributed to the precipitation of heavy metal component from the glass which acts as a diffusion species and then dissolves the crystalline phase during firing. The presence of glass in the dielectric enhances the formation of solid solution (Ba(x)Sr1-x)TiO3 and results in the broadening of the Curie peak.	en_US
dc.language.iso	en_US	en_US
dc.title	DEVELOPMENT OF TEMPERATURE-STABLE THICK-FILM DIELECTRICS .3. ROLE OF GLASS ON THE MICROSTRUCTURE EVOLUTION OF A THICK-FILM DIELECTRIC	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/33.83957	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY	en_US
dc.citation.volume	14	en_US
dc.citation.issue	3	en_US
dc.citation.spage	645	en_US
dc.citation.epage	649	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1991GC91000033	-
dc.citation.woscount	6	-
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