完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | LOONG, WA | en_US |
dc.contributor.author | SU, AN | en_US |
dc.contributor.author | WANG, JL | en_US |
dc.contributor.author | CHU, CY | en_US |
dc.date.accessioned | 2014-12-08T15:05:10Z | - |
dc.date.available | 2014-12-08T15:05:10Z | - |
dc.date.issued | 1991-09-01 | en_US |
dc.identifier.issn | 0167-9317 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/3703 | - |
dc.description.abstract | This paper presents new processes for the enhancement of oxygen reactive ion etching (RIE) resistance of two single-layer resist systems by selective incorporation of potassium ions into the resist image in solution after exposure. One resist system is diazonaphthoquinone (DAQ) and poly(p-formyloxystyrene) (PFS) mixed with a catalytic amount of triphenylsulfonium hexafluoroarsenate as a photoacid generator. After deep-UV exposure, the photoacid catalyzes the photo-Fries rearrangement of PFS to form poly(p-hydroxystyrene) (PHS); DAQ rearranges to form indene carboxylic acid and grafts into PHS via S-O bond formation. A latent image is formed by selective reaction of carboxylic groups with C5H11COOK in aqueous solution in exposed areas which are resistant to oxygen RIE. Dry developed negative-tone patterns are obtained by oxygen RIE. The other resist system is AZ1350J, dipping in C23H47COOK in hexane after deep-UV exposure. C23H47COOK selectively incorporates into unexposed areas only. Dry developed positive-tone patterns are obtained by oxygen RIE in this case. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | DIAZONAPHTHOQUINONE | en_US |
dc.subject | POLY(PARA-FORMYLOXYSTYRENE) | en_US |
dc.subject | TRIPHENYLSULFONIUM HEXAFLUOROARSENATE | en_US |
dc.subject | C5H11COOK, C23H47COOK | en_US |
dc.subject | SURFACE TREATMENT | en_US |
dc.subject | REACTIVE ION ETCHING | en_US |
dc.title | PROCESSES OF TOP-IMAGED SINGLE-LAYER RESISTS BY POTASSIUM-ION TREATMENT IN SOLUTION | en_US |
dc.type | Article | en_US |
dc.identifier.journal | MICROELECTRONIC ENGINEERING | en_US |
dc.citation.volume | 14 | en_US |
dc.citation.issue | 3-4 | en_US |
dc.citation.spage | 237 | en_US |
dc.citation.epage | 248 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:A1991GM67800009 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |