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dc.contributor.authorLOONG, WAen_US
dc.contributor.authorSU, ANen_US
dc.contributor.authorWANG, JLen_US
dc.contributor.authorCHU, CYen_US
dc.date.accessioned2014-12-08T15:05:10Z-
dc.date.available2014-12-08T15:05:10Z-
dc.date.issued1991-09-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://hdl.handle.net/11536/3703-
dc.description.abstractThis paper presents new processes for the enhancement of oxygen reactive ion etching (RIE) resistance of two single-layer resist systems by selective incorporation of potassium ions into the resist image in solution after exposure. One resist system is diazonaphthoquinone (DAQ) and poly(p-formyloxystyrene) (PFS) mixed with a catalytic amount of triphenylsulfonium hexafluoroarsenate as a photoacid generator. After deep-UV exposure, the photoacid catalyzes the photo-Fries rearrangement of PFS to form poly(p-hydroxystyrene) (PHS); DAQ rearranges to form indene carboxylic acid and grafts into PHS via S-O bond formation. A latent image is formed by selective reaction of carboxylic groups with C5H11COOK in aqueous solution in exposed areas which are resistant to oxygen RIE. Dry developed negative-tone patterns are obtained by oxygen RIE. The other resist system is AZ1350J, dipping in C23H47COOK in hexane after deep-UV exposure. C23H47COOK selectively incorporates into unexposed areas only. Dry developed positive-tone patterns are obtained by oxygen RIE in this case.en_US
dc.language.isoen_USen_US
dc.subjectDIAZONAPHTHOQUINONEen_US
dc.subjectPOLY(PARA-FORMYLOXYSTYRENE)en_US
dc.subjectTRIPHENYLSULFONIUM HEXAFLUOROARSENATEen_US
dc.subjectC5H11COOK, C23H47COOKen_US
dc.subjectSURFACE TREATMENTen_US
dc.subjectREACTIVE ION ETCHINGen_US
dc.titlePROCESSES OF TOP-IMAGED SINGLE-LAYER RESISTS BY POTASSIUM-ION TREATMENT IN SOLUTIONen_US
dc.typeArticleen_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume14en_US
dc.citation.issue3-4en_US
dc.citation.spage237en_US
dc.citation.epage248en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:A1991GM67800009-
dc.citation.woscount0-
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