完整後設資料紀錄
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dc.contributor.authorLOONG, WAen_US
dc.contributor.authorPAN, HTen_US
dc.date.accessioned2014-12-08T15:05:10Z-
dc.date.available2014-12-08T15:05:10Z-
dc.date.issued1991-09-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://hdl.handle.net/11536/3704-
dc.description.abstractThe Dill's parameters of nonlinear photobleaching materials of p-diazo-N,N-dimethylaniline chloride zinc chloride (DZC) and poly(di-n-hexylsilane) (PDHS) are irregularly dependent on their film thickness, and also their refractive indexes change during exposure. These difficulties make Dill's model inadequate for the simulation of nonlinear photobleaching materials used in contrast-enhanced lithography. A direct approach was proposed to solve these difficulties. Equations with four parameters were derived to simulate the nonlinear photobleaching curves of DZC, PDHS and other nonlinear photobleaching curves reported in literature. The equations correlated verv well with these curves by using best-fit parameters. Linearity was found with these four parameters in these equations as a function of film thicknesses of DZC and PDHS. Based on this linearity, the modelling and simulation of these nonlinear photobleaching materials as contrast-enhancement layers are more convenient and accurate than those using Dill's model.en_US
dc.language.isoen_USen_US
dc.subjectPARA-DIAZO-Nen_US
dc.subjectN-DIMETHYLANILINE CHLORIDE ZINC CHLORIDEen_US
dc.subjectPOLY(DIHEXYLSILANE)en_US
dc.subjectPOLY(N-VINYLPYRROLIDONE)en_US
dc.subjectCONTRAST ENHANCEMENTen_US
dc.subjectMODELINGen_US
dc.subjectSIMULATIONen_US
dc.titleTHE SIMULATION OF CONTRAST-ENHANCED LITHOGRAPHYen_US
dc.typeArticleen_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume14en_US
dc.citation.issue3-4en_US
dc.citation.spage299en_US
dc.citation.epage309en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:A1991GM67800014-
dc.citation.woscount1-
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