Microstructure evolution and dielectric properties of Ba0.7Sr0.3TiO3 parallel plate capacitor with Cr interlayer

doi:10.1016/j.surfcoat.2007.05.077

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DC 欄位	值	語言
dc.contributor.author	Ho, Chia-Cheng	en_US
dc.contributor.author	Chiou, Bi-Shiou	en_US
dc.contributor.author	Chang, Li-Chun	en_US
dc.date.accessioned	2014-12-08T15:05:10Z	-
dc.date.available	2014-12-08T15:05:10Z	-
dc.date.issued	2007-12-15	en_US
dc.identifier.issn	0257-8972	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.surfcoat.2007.05.077	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3708	-
dc.description.abstract	The microstructure, crystalline phase, surface morphology, and dielectric properties of a sandwich structure of Ba0.7Sr0.3TiO3/Cr/ Ba0.7Sr0.3TiO3 (BST/Cr/BST) dielectric are characterized to understand the influence of the nano-Cr interlayer. BST dielectrics inserted with Cr film of thickness ranged from 2 nm to 15 nm all show the crystalline cubic phase. However, TiO2 layer is formed on the upper BST layer after the BST/Cr/BST dielectrics are annealed at 900 degrees C in O-2 atmosphere for one hour. In this study, TEM, AFM, SEM, X-ray diffraction, and AES are employed to investigate the microstructure evolution of the BST/Cr/BST dielectrics after annealing. The correlations between the microstructure and the dielectric properties of the Pt/BST/Cr/BST/Pt capacitors with various Cr thicknesses are explored. (C) 2007 Elsevier B.V. All tights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	dielectric material	en_US
dc.subject	interlayer	en_US
dc.subject	microstructure	en_US
dc.subject	capacitor	en_US
dc.subject	BST	en_US
dc.title	Microstructure evolution and dielectric properties of Ba0.7Sr0.3TiO3 parallel plate capacitor with Cr interlayer	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/j.surfcoat.2007.05.077	en_US
dc.identifier.journal	SURFACE & COATINGS TECHNOLOGY	en_US
dc.citation.volume	202	en_US
dc.citation.issue	4-7	en_US
dc.citation.spage	768	en_US
dc.citation.epage	773	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Innovative Packaging Research Center	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Innovative Packaging Research Center	en_US
dc.identifier.wosnumber	WOS:000251618900033	-
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